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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV194 UHF power transistor
Product specification January 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter-ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol.
alfpage
BLV194
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 12.5 PL (W) 16 Gp (dB) 7 C (%) 50
1 3 5
2 4 6
c
handbook, halfpage
b
MBB012
e
Top view
MBA931 - 1
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
January 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCEO VCES VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current average collector current total power dissipation storage temperature junction temperature Tmb = 25 C CONDITIONS open base base short-circuited open collector - - - - - - -65 - MIN.
BLV194
MAX. 16 32 3 3 3 46 150 200
UNIT V V V A A W C C
handbook, halfpage
10
MRC103
handbook, halfpage
60
MRC102
IC (A)
(1) (2)
Ptot (W)
(2)
40
(1)
1
20
10-1 1 10 VCE (V)
102
0 0 20 40 60 80 100 120 Th (oC)
(1) Tmb = 25 C. (2) Th = 70 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curve.
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Pdis = 46 W; Tmb = 25 C THERMAL RESISTANCE 3.8 K/W 0.4 K/W
January 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL V(BR)CEO V(BR)CES V(BR)EBO ICER hFE Cc Cre Cc-mb Note 1. Measured under pulse conditions: tp 200 s; 0.02. PARAMETER collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance collector-mounting base capacitance CONDITIONS IB = 0; IC = 40 mA IC = 20 mA; VBE = 0 IC = 0; IE = 5 mA RBE = 700 ; VCE = 16 V IC = 1.2 A; VCE = 10 V (note 1) IE = ie = 0; VCB = 12.5 V; f = 1 MHz IC = 0; VCB = 12.5 V; f = 1 MHz MIN. 16 32 3 - 25 - - - TYP. - - - - 70 26 19 2
BLV194
MAX. UNIT - - - 1 - - - - pF pF pF V V V mA
handbook, halfpage
100
MRC098
handbook, halfpage
60
MRC095
hFE 80
Cc (pF)
40 60
40 20 20
0
0 0 2 4 IC (A) 6 0 4 8 12 VCB (V) 16
VCE = 10 V. Measured under pulse conditions: tp 200 s; 0.02.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Collector capacitance as a function of collector-base voltage, typical values.
January 1993
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit. Rth j-mb = 0.4 K/W. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 12.5 ICQ (mA) 10 PL (W) 16 GP (dB) 7 typ. 8.5
BLV194
C (%) 50 typ. 57
handbook, halfpage
16
MRC096
80
handbook, halfpage
Gp (dB) 12 Gp 8
(%) 60
20 PL (W) 16
MRC101
12 40
4 20
8
4
0 0 4 8 12 16 PL (W)
0 20
0
0
1
2
3 PIN (W)
4
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz.
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; f = 900 MHz.
Fig.6
Power gain and efficiency as functions of load power, typical values.
Fig.7
Load power as a function of input power, typical values.
Ruggedness in class-AB operation The BLV194 is capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases at rated output power under the following conditions: VCE = 15.5 V; Th = 25 C; Rth j-mb = 0.4 K/W; f = 900 MHz.
January 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV194
handbook, full pagewidth
C2 50 input C1 L1
C4 L2
C6 L3 L4 DUT
C9 L7 L10
C11 L11
C13 L12
C15 C17 50 output
C3
C5
C7
L5
C10
C12
C14
C16
MEA985
L6 +VBB C21
R1
L8
C20 C8
L9
R2 +VCC
C18
C19
f = 900 MHz.
Fig.8 Class-AB test circuit.
January 1993
6
Philips Semiconductors
Product specification
UHF power transistor
List of components (see test circuit) COMPONENT C1, C8, C17 C3, C5, C14, C16 C2, C6, C7 C4 C13, C15 C9, C10 C11, C12 C18 C19, C21 L1, L12 L2, L11 L3 L4, L7 L5, L8 L6, L9 L10 R1, R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 3) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor electrolytic capacitor stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 4 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband HF choke stripline (note 3) 0.25 W metal film resistor 50 10 length 7 mm width 2.4 mm VALUE 330 pF 1.4 to 5.5 pF 4.3 pF 3.9 pF 4.7 pF 5.6 pF 5.6 pF 100 nF 10 F, 63 V 50 50 50 41 45 nH length 24 mm width 2.4 mm length 10 mm width 2.4 mm length 8 mm width 2.4 mm length 3 mm width 3.2 mm int. dia. 4 mm leads 2 x 5 mm DIMENSIONS
BLV194
CATALOGUE NO.
2222 809 09001
2222 852 47104 2222 030 37688
4312 020 36642
3. The striplines are on a double copper-clad printed- circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 132 inch.
January 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV194
ndbook, full pagewidth
+VBB C21 L6 C8 C20 R1 C4 L1 L5 C6 L2 C7 C3 C5 L3 C9 L4 L7 C10 L8 C11 L10 R2 C13 L9
+VCC C19
C18
C2 C1
C15 C17 L12
L11
C12 C14 C16
MEA984
handbook, full pagewidth
126 mm
strap
strap
70 mm
strap mounting screws (8x)
rivets (12x)
strap
MEA983
The components are mounted on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws and copper straps under the emitter leads.
Fig.9 Component layout for 900 MHz class-AB test circuit.
January 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV194
handbook, halfpage
8
MRC099
Zi ()
handbook, halfpage
3
MRC100
6
ZL () ri 2
RL
4 xi 2 1 XL 0
-2 840
880
920
f (MHz)
960
0 840
880
920
f (MHz)
960
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 C; PL = 16 W.
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 C; PL = 16 W.
Fig.10 Input impedance as a function of frequency (series components), typical values.
Fig.11 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
12
MRC097
Gp (dB)
8
handbook, halfpage
4 Zi ZL
MBA451
0 840
880
920
f (MHz)
960
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V; Th = 25 C; PL = 16 W.
Fig.12 Definition of transistor impedance.
Fig.13 Power gain as a function of frequency, typical values.
January 1993
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV194
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
January 1993
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV194
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
January 1993
11

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